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| STB9NK60ZD STF9NK60ZD - STP9NK60ZD N-channel 600V - 0.85 - 7A - D2PAK/TO-220FP/TO-220 SuperFREDMeshTM Power MOSFET General features Type STB9NK60ZD STF9NK60ZD STP9NK60ZD VDSS 600V 600V 600V RDS(on) <0.95 <0.95 <0.95 ID 7A 7A 7A Pw 125W 30W 125W TO-220 3 1 3 1 2 3 1 2 TO-220FP Very high dv/dt capability 100% avalanche tested Gate charge minimized Low intrinsic capacitances Fast internal recovery diode DPAK Description The SuperFREDMeshTM series associates all advantages of reduced on-resistance, zener gate protection and very high dv/dt capability with a Fast body-drain recovery diode. Such series complements the "FDmeshTM" advanced technology. Internal schematic diagram Applications Switching application Order codes Part number STB9NK60ZD STF9NK60ZD STP9NK60ZD Marking B9NK60ZD F9NK60ZD P9NK60ZD Package DPAK TO-220FP TO-220 Packaging Tape & reel Tube Tube June 2006 Rev 7 1/16 www.st.com 16 Contents STB9NK60ZD - STF9NK60ZD - STP9NK60ZD Contents 1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................ 6 3 4 5 6 Test circuits .............................................. 9 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 2/16 STB9NK60ZD - STF9NK60ZD - STP9NK60ZD Electrical ratings 1 Electrical ratings Table 1. Symbol VDS VGS ID ID IDM (2) Absolute maximum ratings Value Parameter DPAK/TO-220 Drain-source voltage (VGS = 0) Gate- source voltage Drain current (continuos) at TC = 25C Drain current (continuos) at TC = 100C Drain current (pulsed) Total dissipation at TC = 25C Derating factor 7 4.3 28 125 1 4000 15 -2500 600 30 7 (1) 4.3 28 (1) (1) Unit TO-220FP V V A A A W W/C V V/ns V PTOT 30 0.24 VESD(G-S) Gate source ESD (HBM-C=100pF, R=1.5K) dv/dt (3) Peak diode recovery voltage slope Insulation withstand voltage (RMS) from all three leads to external heat sink (t=1s;TC=25C) Operating junction temperature Storage temperature VISO Tj Tstg -55 to 150 C 1. Limited only by maximum temperature allowed 2. Pulse width limited by safe operating area 3. ISD < 7A, di/dt < 500A/s, VDD =80%V(BR)DSS Table 2. Thermal data TO-220/DPAK TO-220FP -4.16 62.5 300 C/W C/W C/W C Thermal resistance junction-pcb Max (when mounted on minimum footprint) Rthj-pcb 30 1 Rthj-case Thermal resistance junction-case Max Rthj-amb Thermal resistance junction-ambient Max Tl Maximum lead temperature for soldering purpose Table 3. Symbol IAR EAS Avalanche characteristics Parameter Avalanche current, repetitive or not-repetitive (pulse width limited by Tj max) Single pulse avalanche energy (starting Tj = 25C, ID = IAR, VDD = 50V) Max value 7 235 Unit A mJ 3/16 Electrical characteristics STB9NK60ZD - STF9NK60ZD - STP9NK60ZD 2 Electrical characteristics (Tcase =25C unless otherwise specified) Table 4. Symbol V(BR)DSS IDSS IGSS VGS(th) RDS(on) On /off states Parameter Drain-source breakdown voltage Test conditions ID = 1mA, VGS = 0 Min. 600 1 50 10 2.5 3.5 0.85 4.5 0.95 Typ. Max. Unit V A A A V VDS = Max rating Zero gate voltage drain current (VGS = 0) VDS = Max rating, TC = 125C Gate-body leakage current (VDS = 0) VGS = 20V Gate threshold voltage VDS = VGS, ID = 100A Static drain-source on resistance VGS = 10V, ID = 3.5A Table 5. Symbol gfs (1) Ciss Coss Crss COSS eq(2) Qg Qgs Qgd Dynamic Parameter Forward transconductance Input capacitance Output capacitance Reverse transfer capacitance Equivalent output capacitance Total gate charge Gate-source charge Gate-drain charge Test conditions VDS = 15V, ID = 3.5A Min. Typ. 5.3 1110 135 30 72 41 8.7 21 53 Max. Unit S pF pF pF pF nC nC nC VDS = 25V, f = 1 MHz, VGS = 0 VGS = 0V, VDS = 0V to 480V VDD = 480V, ID = 7A, VGS = 10V (see Figure 16) 1. Pulsed: Pulse duration = 300 s, duty cycle 1.5 % 2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS 4/16 STB9NK60ZD - STF9NK60ZD - STP9NK60ZD Electrical characteristics Table 6. Symbol td(on) tr td(off) tf tr(Voff) tf tc Switching times Parameter Turn-on delay time Rise time Turn-off-delay time Fall time Off-voltage Rise Time Fall Time Cross-over Time Test Conditions VDD = 300V, ID = 3.5A RG = 4.7, VGS = 10V (see Figure 15) VDD = 480V, ID = 7A, RG = 4.7, VGS = 10V (see Figure 15) Min. Typ. 11.4 13.6 23.1 15 11 8 20 Max Unit ns ns ns ns ns ns ns Table 7. Symbol ISD ISDM (1) VSD (2) trr Qrr IRRM trr Qrr IRRM Source drain diode Parameter Source-drain current Source-drain current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 7A, VGS = 0 ISD = 7A, di/dt = 100A/s VDD = 30V, Tj = 25C (see Figure 20) ISD = 7A, di/dt = 100A/s VDD = 30V, Tj = 150C (see Figure 20) 130 663 8.3 113 935 10 Test Conditions Min. Typ. Max. Unit 7 28 1.6 A A V ns nC A ns nC A 1. Pulse width limited by safe operating area 2. Pulsed: Pulse duration = 300 s, duty cycle 1.5 % Table 8. Symbol BVGSO(1) Gate-source zener diode Parameter Gate-source breakdown voltage Test conditions Igs= 1mA (open drain) Min 30 Typ Max Unit V 1. The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device's ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device's integrity. These integrated Zener diodes thus avoid the usage of external components 5/16 Electrical characteristics STB9NK60ZD - STF9NK60ZD - STP9NK60ZD 2.1 Figure 1. Electrical characteristics (curves) Safe operating area for TO-220 / DPAK Figure 2. Thermal impedance for TO-220 / DPAK Figure 3. Safe operating area for TO-220FP Figure 4. Thermal impedance for TO-220FP Figure 5. Output characterisics Figure 6. Transfer characteristics 6/16 STB9NK60ZD - STF9NK60ZD - STP9NK60ZD Figure 7. Normalized BVDSS vs temperature Figure 8. Electrical characteristics Static drain-source on resistance Figure 9. Gate charge vs gate-source voltage Figure 10. Capacitance variations Figure 11. Normalized gate threshold voltage vs temperature Figure 12. Normalized on resistance vs temperature 7/16 Electrical characteristics Figure 13. Source-drain diode forward characteristics STB9NK60ZD - STF9NK60ZD - STP9NK60ZD Figure 14. Maximum avalanche energy vs temperature 8/16 STB9NK60ZD - STF9NK60ZD - STP9NK60ZD Test circuits 3 Test circuits Figure 16. Gate charge test circuit Figure 15. Switching times test circuit for resistive load Figure 17. Test circuit for inductive load Figure 18. Unclamped inductive load test switching and diode recovery times circuit Figure 19. Unclamped inductive waveform Figure 20. Switching time waveform 9/16 Package mechanical data STB9NK60ZD - STF9NK60ZD - STP9NK60ZD 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK(R) packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 10/16 STB9NK60ZD - STF9NK60ZD - STP9NK60ZD Package mechanical data TO-220 MECHANICAL DATA DIM. A b b1 c D E e e1 F H1 J1 L L1 L20 L30 mm. MIN. 4.40 0.61 1.15 0.49 15.25 10 2.40 4.95 1.23 6.20 2.40 13 3.50 16.40 28.90 3.75 2.65 3.85 2.95 0.147 0.104 TYP MAX. 4.60 0.88 1.70 0.70 15.75 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 MIN. 0.173 0.024 0.045 0.019 0.60 0.393 0.094 0.194 0.048 0.244 0.094 0.511 0.137 0.645 1.137 0.151 0.116 inch TYP. MAX. 0.181 0.034 0.066 0.027 0.620 0.409 0.106 0.202 0.052 0.256 0.107 0.551 0.154 oP Q 11/16 Package mechanical data STB9NK60ZD - STF9NK60ZD - STP9NK60ZD TO-220FP MECHANICAL DATA mm. MIN. 4.4 2.5 2.5 0.45 0.75 1.15 1.15 4.95 2.4 10 16 28.6 9.8 2.9 15.9 9 3 30.6 10.6 3.6 16.4 9.3 3.2 1.126 .0385 0.114 0.626 0.354 0.118 TYP MAX. 4.6 2.7 2.75 0.7 1 1.7 1.7 5.2 2.7 10.4 MIN. 0.173 0.098 0.098 0.017 0.030 0.045 0.045 0.195 0.094 0.393 0.630 1.204 0.417 0.141 0.645 0.366 0.126 inch TYP. MAX. 0.181 0.106 0.108 0.027 0.039 0.067 0.067 0.204 0.106 0.409 DIM. A B D E F F1 F2 G G1 H L2 L3 L4 L5 L6 L7 O A B L3 L6 L7 F1 F D G1 H F2 L2 L5 E 123 L4 12/16 G STB9NK60ZD - STF9NK60ZD - STP9NK60ZD Package mechanical data D2PAK MECHANICAL DATA TO-247 MECHANICAL DATA mm. DIM. MIN. A A1 A2 B B2 C C2 D D1 E E1 G L L2 L3 M R V2 0 4.88 15 1.27 1.4 2.4 0.4 4 10 8.5 5.28 15.85 1.4 1.75 3.2 0.192 0.590 0.050 0.055 0.094 0.015 4.4 2.49 0.03 0.7 1.14 0.45 1.23 8.95 8 10.4 0.393 0.334 0.208 0.625 0.055 0.068 0.126 TYP MAX. 4.6 2.69 0.23 0.93 1.7 0.6 1.36 9.35 MIN. 0.173 0.098 0.001 0.027 0.044 0.017 0.048 0.352 0.315 TYP. MAX. 0.181 0.106 0.009 0.036 0.067 0.023 0.053 0.368 inch 3 1 13/16 Package mechanical data STB9NK60ZD - STF9NK60ZD - STP9NK60ZD 5 Package mechanical data D2PAK FOOTPRINT TAPE AND REEL SHIPMENT REEL MECHANICAL DATA DIM. A B C D G N T 1.5 12.8 20.2 24.4 100 30.4 26.4 13.2 mm MIN. MAX. 330 0.059 0.504 0.520 0795 0.960 1.039 3.937 1.197 BULK QTY 1000 inch MIN. MAX. 12.992 TAPE MECHANICAL DATA DIM. A0 B0 D D1 E F K0 P0 P1 P2 R T W mm MIN. 10.5 15.7 1.5 1.59 1.65 11.4 4.8 3.9 11.9 1.9 50 0.25 23.7 24.3 MAX. 10.7 15.9 1.6 1.61 1.85 11.6 5.0 4.1 12.1 2.1 inch MIN. MAX. 0.413 0.421 0.618 0.626 0.059 0.063 0.062 0.063 0.065 0.073 0.449 0.456 0.189 0.197 0.153 0.161 0.468 0.476 0.075 0.082 1.574 0.35 0.0098 0.0137 0.933 0.956 BASE QTY 1000 * on sales type 14/16 STB9NK60ZD - STF9NK60ZD - STP9NK60ZD Revision history 6 Revision history Table 9. Date 29-Sep-2003 09-Jun-2006 Revision 6 7 Data updated New template Changes 15/16 STB9NK60ZD - STF9NK60ZD - STP9NK60ZD Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries ("ST") reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST's terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST'S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZE REPRESENTATIVE OF ST, ST PRODUCTS ARE NOT DESIGNED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS, WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. (c) 2006 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 16/16 |
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